study of the process of local source for doping semiconductor wafers with zinc

摘要

the invention concerns a coating process for doping zinc local source with semiconductor wafer used for getting optoelectronice and microwave devices.the process according to the invention provides for the lodging of a thin layer of silicon dioxide in windows for diffusion on the surface of semiconductor wafers, and then cut the cold ca. 450gree k of a local source of zinc in layer on the surface layer of sio2 / si by using a zinc target disc fixed to the cathode purity electronics catodica spraying facility,in radiofrecventa streams.