Method of producing by stepwise etching a thin-film transistor with a self-aligned gate in regard to source and drain, and transistor so obtained

摘要

the manufacturing process, by etching in a slope of a thin film transistor gate self aligned relative to the drain and source of the transistor and obtained by the process.;the process consists of a glass substrate (2) and (4) of the transistor, the gate and deposited on the substrate and the gate, an insulation layer (6) to be placed on the insulation layer, a thick layer of hydrogenated amorphous silicon (8); depositing on the layer of silicon on a c bed of positive photosensitive resin (10); and irradiating the resin layer through the substrate.the gate as a mask to radiation, developing the resin; and chemically etching after successive partial silicon layer until the discovery of the insulation layer.the remaining resin is used in each case as the mask and even "at the end of each etching of the layer of silicon to make electrical contacts and electrodes of the source and the drain of the transistor.;application to the realization of matrix for liquid crystal displays ally active plate.