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BANDGAP CONTROL IN AMORPHOUS SEMICONDUCTORS
BANDGAP CONTROL IN AMORPHOUS SEMICONDUCTORS
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机译:非晶半导体的带隙控制
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摘要
Method of producing amorphous semiconductor hydrides (hydrogenated amorphous semiconductors) with specified bandgaps. The desired bandgap is achieved by controlling the temperature and partial pressure of higher order semiconductanes which are introduced into, for example, in a hotwall epitaxial reactor, to create a deposit on a substrate held in the reactor, said deposit being created by pyrolytic decomposition of said semiconductanes.
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