Brief description of embodiments of a semiconductor lasers has junctions blocking ensuring an electrical confinement

摘要

According to this process, a substrate 54 or of a layer of type n * * +, are etched in the substrate or the layer of the mesas 56 to the flat top and oblique edges, and is then produced in any order, the two following operations: a) a p type doping by diffusion or ionic implantation of an impurity of the p type or of an impurity, making the semi - insulating material; b) a liquid phase epitaxy of a double heterostructure, this double heterostructure forming solely on the top of the mesas and on the flat bottom of the intervals separating those -, but not on the oblique sides of the mesas, this double heterostructure comprising at least three layers q1, q2, q3, successively doped n * * +, which is not doped and constituting the active layer and not doped or doped p & br / (see appended drawing in bopi) & br / & & br /