Method of producing semiconductor lasers with blocking junctions for electrical confinement

摘要

According to this method, starting from a substrate (54) or an n+-type layer, flat-topped, sloping-sided mesas (56) are etched in this substrate or this layer, and the following two operations are then carried out: a) a p doping by diffusion or ion implantation of a p-type impurity or of an impurity making the material semi-insulating; b) a liquid-phase epitaxy of a double heterostructure, this double heterostructure being formed only on the top of the mesas and on the flat base of the gaps separating them, but not on the sloping sides of the mesas, this double heterostructure comprising at least three layers (Q1, Q2, Q3) in succession n+ doped, undoped and constituting the active layer and undoped or p doped. IMAGE