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Method of forming a resist pattern by radiation exposure of positive- working resist coating comprising a dye and a trihydroxybenzophenone compound and subsequent aqueous alkaline development
Method of forming a resist pattern by radiation exposure of positive- working resist coating comprising a dye and a trihydroxybenzophenone compound and subsequent aqueous alkaline development
Disclosed is a positive-working resist composition which demonstrates improved photospeed and rate of development. The resist composition contains a solvent and select proportions of a novolak resin, a naphthoquinone diazide sensitizer, a dye which absorbs light at a maximum wavelength of from about 330 to about 460 nm and an effective proportion of a trihydroxybenzophenone compound. Also disclosed is a method of forming a resist pattern on a substrate by employing the positive-working resist composition.
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