DOUBLE HETERO-JUNCTION TYPE SEMICONDUCTOR LASER

摘要

PURPOSE:To obtain a laser with extremely small temperature dependance of oscillation wavelength and injection current dependence into an active layer, by alternately laminating the first and second semiconductor layers with different Pb/Sn ratios so that the energy band gap of an active layer, in case of low operational temperature and high operational temperature, varies mutually in reverse relation. CONSTITUTION:On a P type PbTe substrate 1, a P type Pb0.93 Sn0.07 Te clad layer 2, an N type active layer 3 and an N type clad layer 4 are laminated resulting in epitaxial growth, then a groove entering from the layer 4 into the layer 2 is opened in a ring form, and the part surrounded thereby is used as a mesa part. Next, the entire surface is covered with an insulating layer 7, then a window is opened for the mesa part, and an electrode 6 contacted on the mesa part is adhered. In such a constitution, the active layer 3 is constituted of the alternate laminated body with the first semiconductor layer having narrow energy band gap represented in Pb1-x'Snx'Te (0x'1), etc. and the second semiconductor layer having one represented in Pb1-x''Snx''Te (ox''1), etc.