首页>
外国专利>
Process for the production of a semiconductor device in which a silicon wafer is provided with LOCAL field oxide areas.
Process for the production of a semiconductor device in which a silicon wafer is provided with LOCAL field oxide areas.
展开▼
机译:用于生产半导体器件的方法,其中硅晶片具有局部场氧化物区域。
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method of manufacturing a semiconductor device, in which on a surface (1) of a silicon wafer (2) an oxidation mask (3) is locally provided, whereupon the wafer is subjected to an oxidation treatment, in which a layer of field oxide (8) is formed. In order to compensate for thickness losses during further processing steps, a layer of field oxide (8) has to be formed having a thickness exceeding a desired isolation thickness. This initial thickness is realized according to the invention in such a manner that a layer is formed having a thickness which is larger than said initial thickness, whereupon in a plasma with reactive ions this layer is etched back to the desired initial thickness. In the layer thus formed, having the desired initial thickness, the layer of field oxide is prevented from locally being etched in an etching solution (such as the hydrofluoride solution) at a higher rate during further processing steps.
展开▼