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Radiation hardening techniques for metal-oxide silicon devices
Radiation hardening techniques for metal-oxide silicon devices
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机译:金属氧化物硅器件的辐射硬化技术
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摘要
Techniques for improving the radiation hardness of CMOS VLSI devices manufactured using a standard commercial process are disclosed. The techniques include a boron bird's beak implant after a field oxide is grown by the LOCOS process. The radiation hardness of the devices is further enhanced by a bird's beak etch to form a self-aligned guard ring.
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