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中文期刊>材料物理与化学进展(英文)
>Study the Effect of Irradiation Time and HF Concentration on Porosity of Porous Silicon and Study Some of the Electrical Properties of Its Based Device
Study the Effect of Irradiation Time and HF Concentration on Porosity of Porous Silicon and Study Some of the Electrical Properties of Its Based Device
Porous silicon has been produced in this work by photochemical etching process (PC).The irradiation has been achieved using ordinary light source (150δ250 W) power and (875 nm) wavelength. The influence of various irradiation times and HF concentration on porosity of PSi material was investigated by depending on gravimetric measurements. The I-V and C-V characteristics for CdS/PSi structure have been investigated in this work too.
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机译:A Study of Substitution the Element of (La+3) on the Structural and Electrical Properties of the Compound Ferrite (垂势沁.汾没揃抽沁.汾没杉制沁.没遂椙栖水裾汾竏挺摄?锤汳)