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SEMICONDUCTOR DEVICE HAVING RAPID REMOVAL OF MAJORITY CARRIERS FROM AN ACTIVE BASE REGION THEREOF AT DEVICE TURN-OFF AND METHOD OF FABRICATING THIS DEVICE
SEMICONDUCTOR DEVICE HAVING RAPID REMOVAL OF MAJORITY CARRIERS FROM AN ACTIVE BASE REGION THEREOF AT DEVICE TURN-OFF AND METHOD OF FABRICATING THIS DEVICE
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机译:在设备关闭时已从有源基区快速移除大量载具的半导体器件及其制造方法
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摘要
A semiconductor device comprising a bulk substrate and an epitaxial layer grown thereon attains the feature of rapid removal of majority carriers from an N-type active base region thereof, a function conventionally performed by anode shorts, through the incorporation into the otherwise P-type substrate of a highly doped, N-type region having a surface in contact with the N-type epitaxial layer for injecting majority carriers from an N-type active base region in the epitaxial layer into the remaining P-type portion of the substrate.
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