SEMICONDUCTOR DEVICE HAVING RAPID REMOVAL OF MAJORITY CARRIERS FROM AN ACTIVE BASE REGION THEREOF AT DEVICE TURN-OFF AND METHOD OF FABRICATING THIS DEVICE

• 1. 具有防止基区穿通的横向延伸基区屏蔽区的功率半导体器件及其制造方法 [P] . 中国专利： CN1520616A . 2004-08-11
• 2. 用于制造半导体产品的载具以及包括该载具的设备 [P] . 中国专利： CN211879378U . 2020-11-06
• 3. SEMICONDUCTOR DEVICE HAVING RAPID REMOVAL OF MAJORITY CARRIERS FROM AN ACTIVE BASE REGION THEREOF AT DEVICE TURN-OFF AND METHOD OF FABRICATING THIS DEVICE [P] . 德国专利： DE3278185D1 . 1988-04-07

  机译： 在设备关闭时已从有源基区快速移除大量载具的半导体器件及其制造方法

• 4. Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device [P] . 欧洲知识产权局专利： EP0080044B1 . 1988-03-02

  机译： 具有在器件截止时从其有源基极区域中快速去除多数载流子的半导体器件及其制造方法

• 5. Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device [P] . 美国专利： US4782379A . 1988-11-01

  机译： 具有在器件截止时从其有源基极区域中快速去除多数载流子的半导体器件及其制造方法

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