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Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces
Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces
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机译:通过化学气相沉积在金属和半导体表面上选择性沉积钨的方法
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摘要
A method and heating apparatus are provided for selectively depositing metal films, such as tungsten, on the metal and semi-conductor surfaces of a silicon wafer by chemical vapor deposition. The method and heating apparatus serve to isolate the depositing surface of silicon wafers from both infrared radiation and the nucleating species which are vaporized by hot surfaces within the reaction chamber by means of a barrier which reflects or absorbs infrared radiation and condenses vaporized nucleating species before a nucleate metal deposition sites on metal or semiconductor surfaces.
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