MOLECULAR BEAM CRYSTAL GROWTH METHOD FOR III-V COMPOUND SEMICONDUCTOR

摘要

PURPOSE:To removed oxygen atoms of a crystal surface turning them into phosphide so as to obtain a III-V compound semiconductor high in quality by a method wherein a molecular beam is concurrently irradiated onto the crystal surface. CONSTITUTION:A panel 2 cooled by liquid nitrogen is provided inside a growth room 1 of a molecular beam crystal growing device surrounding a substrate crystal, and plural molecular beam sources such as a gallium 3, aluminum 4, an arsenic 5, a phosphorus molecular beam source 6, and the like are mounted so as to direct their beams toward the predetermined position of the substrate crystal 9. Using this device, oxygen atoms can be vaporized turning them into phosphorus oxide by concurrently irradiating a phosphorus molecular beam onto the crystal surface, so that a non-light emitting center caused by oxygen can be decreased. By these processes, a III-V compound semiconductor of arsenic compound optically excellent in quality can be grown.