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PRODUCTION OF CUTTING TOOL MADE OF DIAMOND-COATED TUNGSTEN CARBIDE-BASED SINTERED HARD ALLOY

机译:金刚石涂层硬质合金烧结硬质合金刀具的生产

摘要

PURPOSE:To increase the diamond deposit forming velocity by reducing the Co content in a sintered hard alloy substrate to be coated with diamond, and uniformly dispersing Co in the substrate. CONSTITUTION:Powdery WC, Co, and C are mixed in a specified ratio under ordinary conditions to obtain raw powder, and the raw powder is compacted into a green compact. The green compact is primarily sintered in vacuum at 1400-1500 deg.C. Hot hydrostatic press is applied on the primarily sintered compact at 1300-1500 deg.C and 100-1000 atm pressure to eliminate bores. The pressed compact is secondarily sintered in vacuum at 1400-1500 deg.C to uniformly disperse the Co phase. Consequently, a sintered band alloy substrate consisting of 0.1-1% Co, a trace amt. of finely and uniformly dispersed free C corresponding to C01-C08 of the ISO standard, and the balance WC and having =99% theoretical density ratio is obtained. An artificial diamond coating layer is formed on the surface of the substrate by low-pressure vapor phase synthesis.
机译:用途:通过降低要涂覆金刚石的烧结硬质合金基材中的Co含量,并将Co均匀分散在基材中,从而提高钻石沉积物的形成速度。组成:粉末状的WC,Co和C在常规条件下以指定比例混合以获得原粉,然后将原粉压实成生坯。生坯首先在真空中在1400-1500℃下烧结。将热静压机在1300-1500℃和100-1000 atm的压力下施加到初次烧结的压块上,以消除钻孔。然后在真空中于1400-1500℃下对压制的压块进行二次烧结以均匀地分散Co相。因此,由0.1-1%的Co,痕量的amt组成的烧结带合金基底。得到对应于ISO标准的C01-C08的细小且均匀分散的游离C,并且剩余的WC具有理论密度比≥99%。通过低压气相合成在基板的表面上形成人造金刚石涂层。

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