IMPROVEMENT OF SURFACE DURING EPITAXIAL GROWTH IN LIQUID EPITAXIAL PROCESS

摘要

PURPOSE:To obtain a thin film having a flat surface without generating a terrace pattern by proceeding a predetermined treatment while heaping vertically many jigs having a specified flatness and contg. semiconductor wafers and dipping the jigs in a melt admixed with a feed material. CONSTITUTION:Circular wafers 1 are contained in carbon jigs 2, and many such jigs are heaped. The whole aggregate of the jigs is housed in a quartz cassette 4, in which a melt 3 contg. a solute is contained. The assembly is enclosed by a heater 5 and heated by the heater. The melt 3 fills the inside of the jigs 2 and also upper surfaces of the wafers 1 contacting with the upper surfaces of the wafers 1. Deposition of a compd. is caused on the wafers since the melt reaches supersaturated state when the temp. of the melt is lowered. The flatness of the rear surface of the jig is preferred to be =1mu, but the flatness of an epitaxial thin film can be regulated to =2mu, if the flatness of the rear surface of the jig is regulated to =about 3mu.