DOUBLE HETERO JUNCTION TYPE SEMICONDUCTOR LASER DEVICE

摘要

PURPOSE:To reduce lattice mismatching of a p-clad layer and to make it possible to control both of p- and n-clad layers to have lattice mismatching coefficients within + or -0.1%, by deviating the lattice mismatching coefficient of the n-clad layer to the plus side when forming a double hetero structure. CONSTITUTION:In a double hetero junction type semiconductor laser device formed on a GaAs substrate 10 which is provided with an active layer 12 between an n-type and p-type In1-y(Ga1-xAlx)yP(0=x=1, 0=y=1) clad layers 11, 13, the ratio a/a0 of the lattice constant (a) of the n-type clad layer 11 in the vertical direction of the substrate 10 and the lattice constant a0 of the GaAs substrate 10 is set at 1.0005=a/a0=1.001. By forming the lattice mismatching coefficient of the n-type In1-y(Ga1-xAlx)xP clad layer 11 deviated to more than +0.05% in this way, deviation of about 0.1-0.15% to the minus side developed by Zn doping in the growth of the p-clad layer 13 is compensated. The lattice mismatching coefficient can be thereby controlled within + or -0.1% for both of p- and n-quantity clad layers.