FORMATION OF MOLTEN STARTING MATERIAL FOR GROWING ZN-ADDED GAAS SINGLE CRYSTAL

摘要

PURPOSE:To minimize the evaporation of Zn and to control the initial concn. of Zn in molten Zn-added GaAs with high reproducibility by adding Zn to molten Ga, perfectly melting the Zn by heating and holding, raising the temp. of the molten Zn-added Ga and allowing As vapor to be absorbed in the molten Zn- added Ga. CONSTITUTION:Zn is added to molten Ga and perfectly melted by heating and holding at a temp. between the m.p. of Zn, that is, 419.5 deg.C and 500 deg.C. The temp. of the molten Zn-added Ga is rapidly raised to the m.p. of GaAs or above and an atmosphere of As vapor is formed to allow the As vapor to be absorbed in the molten Zn-added Ga. The amt. of Zn evaporated during melting can be reduced and the initial concn. of Zn in the resulting molten Zn-added GaAs can simply be controlled.