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THICK FILM MULTILAYER INTERCONNECTION SUBSTRATE

机译:厚膜多层互连基板

摘要

PURPOSE:To make a conductor layer uniform in thickness by a method wherein a peripheral stepped section of a thick insulating layer which a conductor layer traverses is constructed in such a manner that an upper layer is so laminated as to recede inside from the edge of a lower layer by a certain space which is equal to or larger than its thickness. CONSTITUTION:A conductor pattern 12 and an insulating layer 14 composed of two thick films are provided onto an insulating substrate 11. The insulating layer 13 is formed on a peripheral stepped section, on which a conductor layer 14 is to be formed, in such a manner that an insulating layer 13b is so formed as to recede from the edge of an insulating layer 13a by a distance l1 which is equal to or larger than its thickness. In this structure, the conductor layer 14 which traverses the peripheral section is so formed as to make its stepped section 14a almost equal to the other section in thickness, and thus a molten solder can be coated on the stepped section 14a.
机译:目的:通过一种方法使导体层的厚度均匀,在该方法中,导体层横穿的厚绝缘层的周边阶梯部分的构造应使上层层压成从绝缘层的边缘向后退下层空间等于或大于其厚度的一定空间。组成:导体图案12和由两个厚膜组成的绝缘层14设置在绝缘基板11上。绝缘层13形成在外围台阶部分上,在该台阶部分上将形成导体层14。绝缘层13b形成为从绝缘层13a的边缘后退一段距离l1,该距离l1等于或大于其厚度。在该结构中,横穿周边部分的导体层14形成为使得其阶梯部分14a的厚度几乎等于另一部分的厚度,因此可以在阶梯部分14a上涂覆熔融焊料。

著录项

  • 公开/公告号JPH0193192A

    专利类型

  • 公开/公告日1989-04-12

    原文格式PDF

  • 申请/专利权人 FUJITSU LTD;

    申请/专利号JP19870250988

  • 发明设计人 SASADA YOICHI;

    申请日1987-10-05

  • 分类号H05K1/02;H05K1/09;H05K3/46;

  • 国家 JP

  • 入库时间 2022-08-22 06:41:29

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