首页>
外国专利>
SILICON GIGABITS PER SECOND METAL-OXIDE-SEMICONDUCTOR DEVICE PROCESSING
SILICON GIGABITS PER SECOND METAL-OXIDE-SEMICONDUCTOR DEVICE PROCESSING
展开▼
机译:每秒钟金属氧化物-半导体半导体加工的硅焦化
展开▼
页面导航
摘要
著录项
相似文献
摘要
In a metal-oxide-semiconductor device process, parasitic capacitance is significantly reduced by differentially oxidizing a substrate and a gate mesa thereon prior to ion implantation and "drive-in" of the drain and source regions. This results in a channel region being formed in the substrate beneath and substantially coextensive with the gate mesa. The conductivity of the channel region is different from the conductivity of the adjacent source and drain regions. In one embodiment, the source and drain regions each extend to a greater depth into the substrate with increasing distance from the channel region.
展开▼