A method of producing a semiconductor device comprising a monocrystalline silicon layer on a substrate

摘要

A method of producing a semiconductor device comprising a monocrystalline layer of silicon on a substrate by which method a sublayer of silicon dioxide or a sublayer thermally matching said substrate is formed on said substrate, a recrystallizable layer of amorphous or polycrystalline silicon is superimposed on said sublayer, at least on capping insulating layer is formed on said thin buffer layer and then said recystallizable layer is converted into a monocrystalline silicon layer. According to the invention, before forming the capping layer a thin buffer layer selected from the group consisting of silicon nitride, aluminium nitride and aluminium oxide is formed on said recrystallizable layer. Such a technique results in a semi-conductor device in which contamination of the recrystallized silicon layer by oxygen from capping-and sublayer is prevented.