Bipolar Integrated Circuit Field Effect Transistor with Tunneling Emitter Connection Terminal

摘要

The transistor relates to a bipolar integrated circuit field effect transistor, esp. suitable for integrated circuits. A thin insulator is used so that the current can flow by not thermal electron emission from semi-insulating layer but tunneling. And there is an overlap range to induce an inversion layer. The transistor is made by the steps of : making a window by source diffusion after growing an oxide on n-type epitaxial layer grown on n+-type wafer; growing field oxide to remove boron glass after diffusing boron; and forming turnneling oxide and simultaneously coating Al on the rear of wafer and source window.