Integrated semiconductor circuit with connector to external circuit - has bipolar transistor with collector terminal coupled to bus, and emitter and base terminals to reference potential

摘要

The bipolar transistor (35) and a bipolar diode (36) are formed on an input contact surface (21) of an integrated circuit for providing an escape path by a shunt, for potential surges caused by electrostatic discharge. A bipolar circuit (25) and a diode clamp with optimum blocking direction breakdown voltage from the collector to base, thus disposing with excessive current from sensitive zones with uniform current distribution. In order to improve an electrostatic discharge protection of positive type, the diode blocking direction breakdown voltages are reduced together with the transistor, functioning as a collector-base diode (38,39). ADVANTAGE - Low-cost electrostatic discharge protection provided by conventional CMOS technique.