Process of forming a resist structure on substrate having topographical features using positive photoresist layer and poly(vinyl pyrrolidone) overlayer

摘要

An improved process for forming multilayer resist structures for lithographic processing of a substrate having topographical features is provided. The structures are comprised of a resist layer having thereover a layer of poly(vinyl pyrrolidone). When the resist layer is a photoresist, the subject structures may optionally contain an absorptive layer directly overlying the substrate and/or a layer of contrast enhancement material overlying the planarizing layer. The poly(vinyl pyrrolidone) optionally contains from about 0.05 to about 0.1 percent by weight of a suitable surfactant, suitably a nonionic surfactant.