Method for fabricating photovoltaic device having improved short wavelength photoresponse

摘要

Amorphous p-i-n silicon photovoltaic cells with improved short wavelength photoresponse are fabricated with reduced p-dopant contamination at the p/i interface. Residual p-dopants are removed by flushing the deposition chamber with a gaseous mixture capable of reacting with excess doping contaminants prior to the deposition of the i- layer and subsequent to the deposition of the p-layer.