Methods of short wavelength laser scribing of a thin film photovoltaic device

摘要

Methods for isolating thin film photovoltaic cells on a superstrate are provided. The method includes focusing a laser beam onto a first surface of the superstrate to remove a thin film stack positioned on a second surface of the superstrate, and directing the laser beam across the first surface of the superstrate to form an isolation scribe that is substantially free from the thin film stack. The thin film stack can include a transparent conductive oxide layer on the second surface, an n-type window layer on the transparent conductive oxide layer, and an absorber layer on the n-type window layer. The laser beam can have a laser wavelength of about 370 nm or less, and/or can have a laser wavelength such that the transparent conductive oxide layer absorbs at least about 80% of the laser beam at the laser wavelength.