CHEMICAL VAPOR DEPOSITION DEVICE USING RESONANT PLASMA BY ELECTRON CYCLOTRON

摘要

PURPOSE:To cause reaction for forming a thin film having uniform thickness on a large-area base plate by generating a plasma flow by microwave discharge resulting from resonance of an electron cyclotron with slit-fitted metallic plate utilized thereto in which a microwave supplying terminal is provided to the center. CONSTITUTION:A chemical vapor deposition device using resonant plasma by an electron cyclotron is provided with a microwave oscillator 100 and a slit-fitted metallic plate 113. Plasma waves are generated by supplying microwaves to this metallic plate 113. Therein a microwave supplying point is provided to the center of the slit-fitted metallic plate 113. A plasma flow is generated by microwave discharge resulting from resonance of the electron cyclotron with the slit-fitted metallic plate 113 utilized thereto. Thereby plasma waves excellent in uniformity can be generated.