CHEMICAL VAPOR DEPOSITION DEVICE BY ELECTRON CYCLOTRON RESONANCE PLASMA

摘要

PURPOSE: To generate high density plasma in a plasma forming chamber to perform high speed film forming or high speed etching by arranging a taper type plasma microwave introducing device between a waveguide and a Rigitano coil. ;CONSTITUTION: A taper type microwave introducing device 106 is arranged between a waveguide 102 connected to a microwave transmitter 100 and a Rigitano coil 316. The taper type microwave introducing device 106 is constituted of two parts and a space between the two is perpendicularly narrowed as they approach the Rigitano coil 316 and becomes the same as the width of a slit made in the Rigitano coil 316 at the jointing part with the Rigitano coil 316. The two parts of the taper type microwave introducing device 106 each are connected to the end of the Rigitano coil on both sides of the slit. Consequently, plasma electron density is made large and the vacuum in a plasma forming chamber is improved.;COPYRIGHT: (C)1994,JPO