CHEMICAL VAPOR DEPOSITION DEVICE USING RESONANT PLASMA BY ELECTRON CYCLOTRON

摘要

PURPOSE:To cause reaction for forming a high-purity thin film at high velocity on a large-area base plate by providing a slit-fitting metallic cylinder in a high-vacuum or high-pressure closed space and housing one part of a vessel made of a dielectric in the inside of the slit-fitted metallic cylinder. CONSTITUTION:A microwave oscillator 1, a slit-fitted metallic cylinder 12, a plasma producing chamber 105 and a reaction vessel 15, etc., are provided to a chemical vapor deposition device using resonant plasma by electron. This slit-fitted metallic cylinder 12 is utilized for propagation of microwaves. Therein the slit-fitted metallic cylinder 12 is provided in a high-vacuum or high-pressure closed space formed of both a vessel 100 made of a dielectric and a vessel 101 made of nonmagnetic metal. The plasma producing chamber 105 is formed in such a shape that one part of the vessel 100 made of the dielectric is housed into the inside of the slit-fitted metallic cylinder 12. Thereby an insulating film made of SiO2 and a sputtering type film made of TaO2, etc., can be formed.