PROCESS FOR GROWING HIGH-TEMPERATURE SUPERCONDUCTING THIN FILM AND APPARATUS THEREFOR

摘要

PURPOSE:To stably form a high-temperature superconducting thin film by decomposing a gaseous compound containing oxygen as a constituent element in a vacuum chamber and depositing particles generated from high-temperature superconductor particle generation source on a substrate. CONSTITUTION:The objective apparatus M for the growth of a high-temperature superconductor has a vacuum chamber 1. A substrate 2 to deposit a high-temperature superconductor is placed in the upper part of the vacuum chamber 1 and is heated at a controlled temperature with a heater 3. An evaporation source 4 acting as a source for generating particles of a high-temperature superconductor is placed at the lower part of the vacuum chamber 1 and a gas-decomposition apparatus 5 is placed between the substrate 2 and the evaporation source 4. A tip end of an apparatus 6 for supplying a reaction gas containing oxygen is opened at a part near the gas decomposition apparatus 5. The decomposition apparatus 5 is connected to a high-frequency wave generation source 5a having a frequency of e.g., 13.56MHz. The reaction gas containing oxygen as a constituent atom (e.g., CO2, N2O or SO2) is supplied by a reaction gas feeding apparatus 6 and a plasma is formed from the gas by high-frequency discharge to effect the decomposition of the gas of the compound containing oxygen as a constituent element.