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PROCESS FOR GROWING HIGH-TEMPERATURE SUPERCONDUCTING THIN FILM AND APPARATUS THEREFOR

机译:生长高温超导薄膜的方法及其装置

摘要

PURPOSE:To accurately control the composition of a high-temperature superconducting thin film on a substrate by opening and closing shielidng apparatuses attached to plural evaporation sources synchronous to the action of shielding apparatuses of film- thickness sensors provided corresponding to the evaporation sources. CONSTITUTION:A substrate 2 heated with a heater 3 is placed at the upper part in a vacuum chamber 1 provided with an evacuation port 1a. The lower part of the chamber 1 is provided with plural evaporation sources 4-6 having shutter plates 7-9. Film-thickness sensors 10-12 having shutter plates 13-15 are placed at the right-hand side of the substrate 2. Controllers 16-18 are placed between the sources 4-6 and the shutter plates 7-9. The shutter plates 7 and 13 are opened to deposit the evaporation material evaporated from the source 4 to the substrate 2 and the detection face of the sensor 10. Thereafter, the shutter plates 8 and 14 are opened and the shutter plates 7, 9, 13 and 15 are closed to deposit the evaporation material evaporated from the source 5 to the substrate 2 and the detection face of the sensor 11. Subsequently, the shutter plates 9 and 15 are opened and the shutter plates 7, 8, 13 and 14 are closed to deposit the evaporation material evaporated from the source 6 to the substrate 2 and the detection face of the sensor 12.
机译:目的:通过与安装在与蒸发源相对应的膜厚传感器的屏蔽装置的动作同步的同时,通过打开和关闭与多个蒸发源相连的滑动装置,来精确控制基板上的高温超导薄膜的成分。组成:用加热器3加热的基板2放在真空室1的上部,真空室1设有排气口1a。腔室1的下部设有多个具有闸板7-9的蒸发源4-6。具有遮光板13-15的膜厚传感器10-12放置在基板2的右侧。控制器16-18放置在源4-6和遮光板7-9之间。挡板7和13被打开以将从源4蒸发的蒸发材料沉积到基板2和传感器10的检测面。此后,挡板8和14被打开并且挡板7、9、13关闭挡板15和15,以将从源5蒸发的蒸发材料沉积到基板2和传感器11的检测面。随后,挡板9和15打开,挡板7、8、13和14关闭。沉积从源6蒸发的蒸发材料到基板2和传感器12的检测面。

著录项

  • 公开/公告号JPH0292898A

    专利类型

  • 公开/公告日1990-04-03

    原文格式PDF

  • 申请/专利权人 FUJITSU LTD;

    申请/专利号JP19880245203

  • 发明设计人 TAMURA YASUTAKA;

    申请日1988-09-29

  • 分类号H01L39/24;C30B28/12;C30B29/22;H01B12/06;

  • 国家 JP

  • 入库时间 2022-08-22 06:20:32

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