Ion-beam modification of high-temperature superconductor thin films for the fabrication of superconductive nanodevices

摘要

. X-ray analysis and measurements of the electrical resistivity after cumulative ion irradiation confirm that the main building blocks of the crystal structure remain intact although the superconductor is converted to an insulator. Superconductive nanodevices can be fabricated with this method by directing a low-divergence beam of light ions at a thin film of HTS through a mask placed at a distance from the surface of the material. The illuminated areas of the film are converted from superconducting to semiconducting and even insulating in a single-step process.