首页> 外国专利> DEVICE FOR ULTRATHIN LAYER STRUCTURES PRODUCTION BY MEANS OF EPITAXIAL GROWTH FROM LIQUID PHASE

DEVICE FOR ULTRATHIN LAYER STRUCTURES PRODUCTION BY MEANS OF EPITAXIAL GROWTH FROM LIQUID PHASE

机译:液相表观生长手段生产超薄层结构的装置

摘要

A device allowing a simple and economic way of ensuring the production of ultra-thin layer structures by means of epitaxial growth from the liquid phase with identical composition of the required layers. The essence of the device is that the prepared initial smelts are placed into chambers for layer depositing, made in the form of a set of channels with the required width of its individual branches. The mutual position of the individual channels allows growth of ultra-thin layers in the required sequence.IMAGE
机译:一种装置,该装置允许通过简单且经济的方式来确保通过所需层的组成相同的液相外延生长来生产超薄层结构。该设备的本质是将准备好的初始熔炼物放入腔室中进行分层沉积,腔室以一组通道的形式制成,并具有所需的各个分支宽度。各个通道的相互位置允许按所需顺序生长超薄层。

著录项

  • 公开/公告号CS63689A1

    专利类型

  • 公开/公告日1990-06-13

    原文格式PDF

  • 申请/专利权人 NOHAVICA DUSAN ING. CSC.CS;

    申请/专利号CS19890000636

  • 发明设计人 NOHAVICA DUSAN ING. CSC.CS;

    申请日1989-01-31

  • 分类号C30B35/00;

  • 国家 CS

  • 入库时间 2022-08-22 06:19:44

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