LIQUID PHASE EPITAXIAL GROWTH DEVICE AND METHOD OF MANUFACTURING LIQUID PHASE EPITAXIAL GROWTH DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a liquid phase epitaxial growth device and a method of manufacturing the liquid phase epitaxial growth in which a p-n-p-n layer is not formed in an area near a composition interface and a light emitting diode can be manufactured at a higher yield.;SOLUTION: Since Zn does not diffuse into a solution including a fused raw material 29c for the growth of an n-type layer by individually purifying solutions including fused raw materials 29a to 29c by controlling a slider 30 to slide over a board 23 for storing the solution including the fused raw material, the p-n-p-n layer is not formed at the area near the composition interface and thereby a light emitting diode can be manufactured at the higher manufacturing yield.;COPYRIGHT: (C)2004,JPO&NCIPI