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Method for making superconducting quantum interference devices using high-Tc superconductors

机译:使用高Tc超导体制造超导量子干涉装置的方法

摘要

A superconducting device operable at temperatures in excess of 30oK and a method for making the device are described. A representative device is an essentially coplanar SQUID device (10, 56A, 56B, 58A, 58B) formed in a single layer (12) of high-Tc superconducting material, the SQUID device (10, 56A, 56B, 58A, 58B) being operable at temperatures in excess of 60 K. High energy beams (34), for example ion beams, are used to convert selected portions (30) of the high-Tc superconductor layer (12) to nonsuperconducting properties so that the material now has both, superconducting regions (20A, 20B) and nonsuperconducting regions (30). In this manner a superconducting loop (16A, 16B, 20A, 20B) having superconducting weak links (16A, 16B) can be formed to comprise the SQUID device.
机译:描述了可在超过30oK的温度下工作的超导设备及其制造方法。代表性的设备是在高T c 超导材料的单层(12)中形成的基本上共面的SQUID设备(10、56A,56B,58A,58B),即SQUID设备(10、56A ,56B,58A,58B)可在超过60 K的温度下工作。高能束(34)(例如离子束)用于转换高T c 超导层(12)具有非超导特性,因此该材料现在同时具有超导区域(20A,20B)和非超导区域(30)。以这种方式,可以形成具有超导弱链接(16A,16B)的超导回路(16A,16B,20A,20B)以构成SQUID设备。

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