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Tablet for wafers - with specified surface roughness parameters for the seating surfaces

机译:威化饼平板电脑-具有适用于底座表面的指定表面粗糙度参数

摘要

Rest plates for wafers during a CVD treatment are usually made of SiC-coated carbon material and polished. To prevent the wafers from sticking to the surface, the seating surfaces for the wafers are recessed and given a surface roughness of at least 1 micron, max. roughness depth of 10 micron and flatness of +- 50 micron or less. Pref. the tablet (10) is a polished SiC plate, impregnated with Si. The surfaces (11) for seating the wafers have a surface roughness with an arithmetical mean of Ra = 2.5 micron and a max. roughness depth Rmax of 15.5 micron. The flatness index is +/- 50 micron or less. Tests have shown that no wafers were damaged out of 72, but 10 out of 72 were damaged in parallel tests, when the Patent method was not applied. ADVANTAGE - This prevents damage to the wafers, when attempts are made to tear them off the seat by force.
机译:CVD处理过程中用于晶片的托板通常由SiC涂层的碳材料制成并抛光。为了防止晶片粘在表面上,晶片的固定表面要凹进,并且表面粗糙度至少为1微米(最大值)。粗糙度深度为10微米,平面度为±50微米或更小。首选药片(10)是一块浸有Si的抛光SiC板。用于放置晶片的表面(11)具有Ra = 2.5微米的算术平均值和最大值的算术平均值的表面粗糙度。粗糙度Rmax为15.5微米。平坦度指数为+/- 50微米或更小。测试表明,在没有应用专利方法的情况下,并行测试中72个晶片中没有损坏,但是72个晶片中有10个被损坏。优点-当试图用力将晶片从底座上撕下时,可以防止损坏晶片。

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