Gallium alkyl cpds. prodn. - by reaction of gallium halide cpds. with alkyl-aluminium halide(s) in presence of metal halide(s) as auxiliary bases

摘要

Gallium alkyls (I) are produced by reaction of Ga halogen cpds. (II) with alkylaluminium halides (III) in the presence of metal halides (IV) as auxiliary bases. (II) are Ga trihalides, alkylgallium dihalides or dialkylgallium halides, pref. coresp. chlorides; (III) are dialkyaluminium halides, alkylaluminium dihalides or mixts. thereof or "sesquihalides" (R3Al2X3), pref. corresp. chlorides, pref. obtd. in situ by addn. of Al halide to trialkylaluminium; (IV) are Gp. I-III metal halides, pref. chlorides, esp. NaCl and/or KCl; reaction temp. is 70-450 deg.C; reaction is carried out in the liquidus region of the educt mixt. up to the temp. at which marked decomposition of educts and/or prods. begins. USE/ADVANTAGE - (I) are useful for the prodn. of III/V semiconductors, esp. Ga/As and Ga/P, by CVD processes, partic. using the volatile lower alkyls. The process enables the prodn. of (I) in higher yield and purity (w.r.t. prior art processes), from cheap and readily available precursors.