Low temperature metalorganic chemical vapor depostion growth of group II- VI semiconductor materials

摘要

A method for growing a Group II-VI epitaxial layer on a substrate is described. The method includes the steps of directing a plurality of vapor flows toward the substrate including a Group II metalorganic vapor, a Group VI organic vapor, with said Group VI organic having an organic group bonded to the Group VI element selected from the group consisting of a secondary alkyl, a tertiary alkyl, an allyl, a cycloallyl, and a benzyl, and a Group II elemental metal vapor. The directed flows of Group II metalorganic vapor, Group VI organic vapor and Group II metal vapor are chemically reacted to provide the epitaxial layer.