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Large scale integrable memory cell with a trench capacitor wherein the trench edge is surrounded by a field oxide region
Large scale integrable memory cell with a trench capacitor wherein the trench edge is surrounded by a field oxide region
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机译:具有沟槽电容器的大规模可集成存储单元,其中沟槽边缘被场氧化区包围
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摘要
A large scale integrable memory cell including a field effect transistor lying at a bit line and further including a storage capacitor which is formed by the wall of a trench and a cooperating electrode. The active region of the storage cell which lies outside the trench is fashioned in the form of a strip. The end face forms one part of the trench edge and the remaining portion of the trench edge is surrounded by a field oxide region.
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