Trench capacitor memory cell mfr. - + with active zone providing transistor and field region in which trench capacitor is provided in substrate surface

摘要

The memory cell has a semiconductor substrate with an active zone (1) providing a transistor, a field region obtained by removal of a corresponding section of the substrate, with the exception of the active zone (1), the trench capacitor region (2) formed within the field region and contacting part of the active zone (1). The field region has a polysilicon filling enclosed by an insulating layer, with the exception of the trench region. The polysilicon filling can be doped with a given conductivity and is electrically coupled to the supply voltage or earth. ADVANTAGE - High memory capacity and reduced chip area.