Method of manufacturing a self-aligned GaAs MESFET with T type tungsten gate

摘要

The invention provides the method of manufacturing a self- aligned GaAs MESFET wherein the Si thin film formed by PECVD (Plasma Enhanced Chemical Vapor Deposition) and the Si.sub.3 N.sub.4 film formed by PCVD (Photo Chemical Vapor Deposition) onto the GaAs substrate are used as the capping film in the activation process, and then the self- aligned MESFET with the T type gate is manufactured through the selective chemical vapor deposition of the tungsten onto the Si thin film. As a result, the gap between the gate electrode and the n+ layer can be adjusted itself.