An electron beam exposure apparatus scans an electron beam in a limited space for electron beam lithography. A magnetic object lens of the apparatus has a lower pole piece facing an object to be processed, which is placed on a continuously moving stage to be exposed to the electron beam. A bore is opened in the lower pole piece which faces the object, and has a stripe-like cross-section to allow the passage of the electron beam. The shape of the opening inhibits the passage of undesirable leakage magnetic flux issued from the magnetic lens toward the object, and guides the electron beam to land on the object perpendicularly. With this configuration, deflection aberration of the deflection apparatus which is caused by an eddy current induced in the moving stage due to the magnetic flux reaching the stage is substantially prevented, and normal landing of the electron beam on the object is realized.
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