FORMATION OF INSULATING FILM BY ELECTRON CYCLOTRON RESONANCE PLASMA CVD METHOD

摘要

PURPOSE:To form the insulating film which is good in the uniformity of a film thickness and film quality by installing a substrate near the cusp plane on the symmetrical axis of the cusp magnetic field formed by a main coil and an auxiliary coil in parallel with the cusp plane and forming the film thereon. CONSTITUTION:An ECR plasma CVD device has a plasma forming chamber 5 which is connected via a microwave introducing window 2 to a waveguide 1, has a 1st gas introducing system 3 and is installed with an exciting coil 4 around the chamber. The device has also a plasma reaction chamber 6 which is provided with a 2nd gas introducing system 7 and a discharge system 9, is disposed internally with a sample base 10 and has the auxiliary coil 11. The cusp magnetic field is formed by the exciting coil 4 and the auxiliary coil 11 which generates the magnetic field in the direction opposite from the direction of the magnetic field generated by this coil. The substrate 8 is installed near the intersected point of the symmetrical axis of the cusp magnetic field and the cusp plane by adjusting the position of the sample base 10 in such a manner that the surface of the substrate 8 is positioned nearly parallel with the cusp plane. The intra-surface uniformity of the thickness and quality of the insulating film formed on the substrate 8 is improved in this way.