METHOD FOR ENGRAVING FINE PARALLEL LINE IN SEMICONDUCTOR ELECTRONIC DEVICE

摘要

PURPOSE: To enable the outline of a cut to be controlled by a method, wherein an insulating layer is partially, isotropically dry-etched in a carbon tetrachloride atmosphere and successively etched under reactive ion plasma until fine parallel lines are sufficiently carved in a contact part. CONSTITUTION: At least, an interlayer insulating layer 4 is provided, a device 10 which discharges gaseous plasma under a high pressure so as to remove photoresist is used, and a first process where the insulating layer 4 is partially, isotropically dry etched in a carbon tetrachloride CF4 atmosphere and a second process where the insulating layer 4 is successively etched under reactive ion plasma until fine parallel lines are sufficiently carved in a contact part. By this setup, the cut 56 of a contact part, especially the cut 6 of a contact base 2 can be controlled in outline.