首页> 外国专利> HIGH-DENSITY PLASMA TREATING DEVICE AND FORMATION OF POLYMERIZED ORGANIC THIN FILM AND SUBSTRATE SURFACE IMPROVEMENT BY UTILIZING PLASMA

HIGH-DENSITY PLASMA TREATING DEVICE AND FORMATION OF POLYMERIZED ORGANIC THIN FILM AND SUBSTRATE SURFACE IMPROVEMENT BY UTILIZING PLASMA

机译:高密度等离子体处理装置及利用等离子体形成聚合有机薄膜和基体表面的改进

摘要

PURPOSE:To form plasma to a higher density with the plasma device for the surface treatment of a substrate by providing a permanent magnet on the rear surface of the substrate. CONSTITUTION:The plasma treating device which deposits the film on the surface of the substrate 4 or makes the surface treatment of the substrate 4 by utilizing the plasma is provided with the permanent magnet 3 consisting of a rare earth system on the rear surface of the substrate 4 and a magnetic field is formed in the direction perpendicular to the surface of the substrate 4 to focus the plasma to the surface of the substrate 4. The plasma beam having the high density and high activity is acted on the limited region of the substrate 4 in this way.
机译:用途:通过在基板的背面提供永磁体,用用于基板表面处理的等离子设备形成更高密度的等离子体。组成:等离子体处理装置,用于在基板4的表面上沉积膜或利用等离子体对基板4进行表面处理,在基板的背面设有由稀土系统组成的永磁体3如图4所示,在垂直于基板4的表面的方向上形成磁场,以将等离子体聚焦到基板4的表面。具有高密度和高活性的等离子体束作用在基板4的有限区域上。通过这种方式。

著录项

  • 公开/公告号JPH0368772A

    专利类型

  • 公开/公告日1991-03-25

    原文格式PDF

  • 申请/专利权人 NIPPON TELEGR & TELEPH CORP NTT;

    申请/专利号JP19890201376

  • 发明设计人 MIYAKE SHOJIRO;SUGIMOTO IWAO;

    申请日1989-08-04

  • 分类号C23C16/00;C23C16/50;

  • 国家 JP

  • 入库时间 2022-08-22 06:01:56

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