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Method of manufacturing a semiconductor device, in which a double layer - consisting of poly Si and a silicide - present on a layer of silicon oxide is etched in a plasma
Method of manufacturing a semiconductor device, in which a double layer - consisting of poly Si and a silicide - present on a layer of silicon oxide is etched in a plasma
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机译:制造半导体器件的方法,其中在等离子体中蚀刻存在于氧化硅层上的由多晶硅和硅化物组成的双层
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摘要
A method of manufacturing a semiconductor device, in which a double layer (12) consisting of a layer of polycrystalline silicon (13) and a top layer of a silicide (14) is applied to a surface (11) of a semiconductor substrate (6) coated with a layer of silicon oxide (10). After an etching mask (15) has been provided, the double layer (12) is etched in a plasma formed in chlorine gas to which up to 20 % by volume of tetrachloromethane is added until the layer of polycrystalline silicon is etched. Thus, the double layer (12) is etched anisotropically and the layer of silicon oxide (10) is attacked in practice to a very small extent.
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