Semiconductor device with component circuits under symmetric influence of undesirable turbulence

摘要

A precharging circuit of a semiconductor memory device has a plurality of precharging transistors (32 to 35) arranged in rows and columns and respectively associated with bit line pairs (36 and 37), and each of the bit line pairs is coupled to two of the precharging transistors in the same row, so that these precharg­ing transistors are substantially equivalent in the electric influences of another component conductive strip (62) passing in a direction substantially in parallel to the row direction.