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A method for controlling specific resistance of single crystal

机译:控制单晶电阻率的方法

摘要

A method for controlling a specific resistance of a single crystal in a Czochralski-method type single crystal pulling apparatus having a hermetical chamber in which the single crystal is pulled up from a polycrystal melt and an inert gas supply and exhaust system by means of which an inert gas is supplied to the hermetical chamber and exhausted therefrom; the method being characterized in that the pneumatic pressure in the hermetical chamber and the supply rate of the inert gas are controlled in accordance with a prepared control pattern with respect to the passage of pulling time.
机译:一种在具有密闭腔室的切克劳斯基方法型单晶拉晶装置中控制单晶比电阻的方法,在该密闭腔室中,从多晶熔体中提拉单晶,并具有惰性气体供排系统。将惰性气体供应到密闭室并从密闭室中排出。该方法的特征在于,密封室中的气压和惰性气体的供给速率根据所准备的关于牵引时间的流逝的控制模式来控制。

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