Method for growing a diamond or c-BN thin film

摘要

The invention relates to a method for growing a thin epitaxial film selected from a diamond film and a c-BN film or a substrate by vapor phase synthesis comprising the steps of:(a) placing the substrate in a vacuum chamber;(b) heating the chamber to a temperature in the range 500 to 1200°C;(c) treating the substrate with a gaseous mixture selected from a chlorine containing gaseous mixture and a fluorine containing gaseous mixture;(d) evacuating the gaseous mixture; and(e) epitaxially growing the thin epitaxial film by introducing a feed gas under chemical vapor deposition conditions.