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METHOD FOR CONTROLLING AVERAGE CURRENT DENSITY IN ELECTROPLATING

机译:电镀中平均电流密度的控制方法

摘要

the invention u043eu0442u043du043eu0441u0438u0442u0441u00a0 to automate u043du0430u043du0435u0441u0435u043du0438u00a0 u0433u0430u043bu044cu0432u0430u043du043eu043fu043eu043au0440u044bu0442u0438u0438 and can 0u044bu0442u044c used u0434u043bu00a0 u0440u0435u0433u0443u043bu0438u0440u043eu0432u0430u043du0438u00a0 high current density at the u0434u0435u0442u0430u043bu00a0u0445 of electro u0440u0440u043eu0432 u043eu0434u043du044bu0445 materials in processing them in the galvanic bath.to improve the accuracy of u0438u0437u043eu0431u0440u0435u0442u0435u043du0438u00a0 u0440u0432u043bu00a0u0435u0442u0441u00a0 u0440u0435u0433u0443u043bu0438u0440u043eu0432u0430 - u0440u0438u00a0 average current density on the surface of parts by automatically recording the form de tali during its processing. set in the tub on the side or top of the details of the subsidiary electrode, put it together with the main electrode to one pole of the source of u043fu0438u0442u0430u043d u0438u00a0 and detail to the other.at the stage of commissioning works simultaneously with the u0441u043du00a0u0442u0438u0435u043c and fixation of the family of p reference lines of equal density, u043eu043fu0440u0435u0434u0435u043bu00a0u0435u043cu044bu0445 u0434u043bu00a0 reference details with various various coefficients to form u043au04441...u043au0444 |. cfr's record and the corresponding reference characteristics 1u0432u044d1 fi (l)...lB3i r | (1).1u0432u044du043f fn (l) where 1u0432u044d1 current through the auxiliary electrode u0434u043bu00a0 1st reference lines of equal density, i talk a bath. further, u0437u0430u0434u0430u0432u0430u00a0 two u0437u043du0430u0447u0435u043du0438u00a0 current bath and u0444u0438u043au0441u0438u0440u0443u00a0 u0441u043eu043eu0442u0432u0435u0442u0441u0442u043eu0443u044eu0449u0438u0435 them u043du0430u043fu0440u00a0u0436u0435u043du0438u00a0 ud, u043eu043fu0440u0435u0434u0435u043bu00a0u044eu0442 volt - u0430u043cu043fu0435u0440u043du0443u044e characterization system u043eu0431u0440u0430u0431u0430u0442u044bu0432u0430u0435u043cu0430u00a0 detail - pan on the 11u0434 f (), at the same time, u043eu043fu0440u0435u0434u0435u043bu00a0u044eu0442 characteristic & amp; ji fa (l).then u043eu043fu0440u0435u0434u0435u043bu00a0u044eu0442 toki baths, the relevant points u043fu0435u0440u0435u0441u0435u0447u0435u043du0438u00a0 volt - u0430u043cu043fu0435u0440u043du043eu0439 characteristics of ua fi (0 to each of the reference lines of equal density, alone u043eu0432u0440u0435u043cu0435u043du043du043e u043eu043fu0440u0435u0434u0435u043bu00a0u044eu0442 toki baths, the relevant points u043fu0435u0440u0435u0441u0435u0447u0435u043du0438u00a0 characteristics with each of the reference characteristics.counting rates of u043fu043eu0434u043eu0431u0438u00a0 characterizing the degree of u0441u043eu043eu0442u0432u0435u0442u0441u0442u0432u0438u00a0 between coefficient of forms and details u043au0444u0434 coefficients form reference details u043au0444u044d1. .u043au0444u044du044c. u043au0444u044du043f point u043fu0435u0440u0435u0441u0435u0447u0435u043du0438u00a0. further, from the received u0440u00a0u0434u0430 ki... ki...Kn choose the closest (or equal) 1 and a reference line of equal density, it is used as the working u0434u043bu00a0 u043eu0435u0433u0443u043bu0438u0440u043eu0432u0430u043du0438u00a0 medium. ste u0442u043eu043au0430.5 il. with the content of 4.
机译:本发明 u043e u0442 u043d u043e u0441 u0438 u0442 u0441 u00a0自动执行 u043d u0430 u043d u0435 u0441 u0435 u043d u0438 u00a0 u0433 u0430 u043b u044c u044c u0430 u043d u043e u043f u043e u043a u0440 u044b u0442 u0438 u0438并可以使用0 u044b u0442 u044c u0434 u043b u00a0 u0440 u0435 u0433 u0443 u043b u043b u0440 u043e u0432 u0430 u043d u0438 u00a0在电子 u0440 u0440 u04340 u043e u0434 u0434 u0435 u0442 u0430 u0430 u043b u043a u0432 u043e u0434 u043d u044b u0445材料在电镀槽中进行处理以提高 u0438 u0437 u043e u0431 u0431 u0440 u0435 u0442 u0435 u043d u043d u0438 u00a0 u0440 u0432 u043b u00a0 u0435 u0442 u0441 u00a0 u0440 u0435 u0433 u0443 u043b u0438 u0440 u043e u0432 u0430- u0440 u0438 u00a0在处理过程中自动记录de tali形式的表面平均电流密度。将其放在副电极细节侧面或顶部的桶中,将其与主电极一起放在 u043f u0438 u0442 u0430 u043d u0438 u00a0的源极的另一极上在调试阶段与 u0441 u043d u00a0 u0442 u0438 u0435 u043c同时工作,并固定等密度的p系列参考线 u043e u043f u0440 u0435 u0434 u0435 u043b u00a0 u0435 u043c u044b u0445 u0434 u043b u00a0参考详细信息具有各种不同的系数,以形成 u043a u04441 ... u043a u0444 |。 cfr的记录和相应的参考特征1 u0432 u044d1 fi(l)... lB3i r | (1).1 u0432 u044d u043d fn(l)其中1 u0432 u044d1电流流经辅助电极的密度相同的第一条参考线,我说是在洗澡。此外, u0437 u0430 u0434 u0430 u0432 u0430 u00a0两个 u0437 u043d u0430 u0447 u0435 u043d u0438 u00a0当前浴池和 u0444 u0438 u043a u0441 u0438 u0440 u0443 u00a0 u0441 u043e u043e u0442 u0432 u0435 u0442 u0441 u0442 u043e u0443 u044e u0449 u0438 u0435他们 u043d u0430 u043f u0440 u00a0 u0436 u0435 u0438 u00a0 ud, u043e u043f u0440 u0435 u0434 u0435 u043b u00a0 u044e u0442伏特- u0430 u043c u043f u0435 u0440 u043d u0443 u044e表征系统 u043e u0431 u0440 u0430 u0431 u0430 u0442 u044b u0432 u0430 u0435 u043c u0430 u00a0详细信息-在11 u0434 f()上平移,同时 u043e u043f u0440 u0435 u0434 u0435 u043b u00a0 u044e u0442特征和放大器; ji fa(l)。然后 u043e u043f u0440 u0435 u0434 u0435 u043b u00a0 u044e u0442 toki baths,相关点 u043f u0435 u0440 u0435 u0431 u0431 u0435 u0447 u0435 u043d u0438 u00a0伏特- u0430 u043c u043f u0435 u0440 u043d u043e u0439的ufi特性(对于每条等密度的参考线为0,仅 u043e u0432 u0440 u0435 u043c u0435 u043d u043d u043e u043e u043f u0440 u0435 u0434 u0435 u043b u00a0 u044e u0442 toki baths,相关点 u043f u0435 u0440 u04340 u0435 u0441 u0435 u0447 u043 u043d u0438 u00a0特征以及每个参考特征。 u043f u043e u0434 u043e u0431 u0438 u00a0的计数率表征了 u0441 u043e u043e u0442 u0432 u0432 u0435 u0442 u0441 u0442 u0432 u0438 u00a0之间的格式系数和详细信息 u043a u0444 u0434系数形式参考详细信息 u043a u0444 u044d1。.uu43a u0444 u044d u044c u043a u0444 u044d u043f点 u043f u0435 u0440 u0435 u0441 u0435 u0447 u0435 u043d u0438 u00a0。 r,从接收到的 u0440 u00a0 u0434 u0430 ki ... ki ... Kn中选择最接近(或等于)1和等密度的参考线,用作工作 u0434 u043b u00a0 u043e u0435 u0433 u0443 u043b u0438 u0440 u043e u0432 u0430 u043d u0438 u00a0媒体。 ste u0442 u043e u043a u0430.5 il。内容为4。

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