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METHOD FOR CONTROLLING AVERAGE CURRENT DENSITY IN ELECTROPLATING
METHOD FOR CONTROLLING AVERAGE CURRENT DENSITY IN ELECTROPLATING
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机译:电镀中平均电流密度的控制方法
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the invention u043eu0442u043du043eu0441u0438u0442u0441u00a0 to automate u043du0430u043du0435u0441u0435u043du0438u00a0 u0433u0430u043bu044cu0432u0430u043du043eu043fu043eu043au0440u044bu0442u0438u0438 and can 0u044bu0442u044c used u0434u043bu00a0 u0440u0435u0433u0443u043bu0438u0440u043eu0432u0430u043du0438u00a0 high current density at the u0434u0435u0442u0430u043bu00a0u0445 of electro u0440u0440u043eu0432 u043eu0434u043du044bu0445 materials in processing them in the galvanic bath.to improve the accuracy of u0438u0437u043eu0431u0440u0435u0442u0435u043du0438u00a0 u0440u0432u043bu00a0u0435u0442u0441u00a0 u0440u0435u0433u0443u043bu0438u0440u043eu0432u0430 - u0440u0438u00a0 average current density on the surface of parts by automatically recording the form de tali during its processing. set in the tub on the side or top of the details of the subsidiary electrode, put it together with the main electrode to one pole of the source of u043fu0438u0442u0430u043d u0438u00a0 and detail to the other.at the stage of commissioning works simultaneously with the u0441u043du00a0u0442u0438u0435u043c and fixation of the family of p reference lines of equal density, u043eu043fu0440u0435u0434u0435u043bu00a0u0435u043cu044bu0445 u0434u043bu00a0 reference details with various various coefficients to form u043au04441...u043au0444 |. cfr's record and the corresponding reference characteristics 1u0432u044d1 fi (l)...lB3i r | (1).1u0432u044du043f fn (l) where 1u0432u044d1 current through the auxiliary electrode u0434u043bu00a0 1st reference lines of equal density, i talk a bath. further, u0437u0430u0434u0430u0432u0430u00a0 two u0437u043du0430u0447u0435u043du0438u00a0 current bath and u0444u0438u043au0441u0438u0440u0443u00a0 u0441u043eu043eu0442u0432u0435u0442u0441u0442u043eu0443u044eu0449u0438u0435 them u043du0430u043fu0440u00a0u0436u0435u043du0438u00a0 ud, u043eu043fu0440u0435u0434u0435u043bu00a0u044eu0442 volt - u0430u043cu043fu0435u0440u043du0443u044e characterization system u043eu0431u0440u0430u0431u0430u0442u044bu0432u0430u0435u043cu0430u00a0 detail - pan on the 11u0434 f (), at the same time, u043eu043fu0440u0435u0434u0435u043bu00a0u044eu0442 characteristic & amp; ji fa (l).then u043eu043fu0440u0435u0434u0435u043bu00a0u044eu0442 toki baths, the relevant points u043fu0435u0440u0435u0441u0435u0447u0435u043du0438u00a0 volt - u0430u043cu043fu0435u0440u043du043eu0439 characteristics of ua fi (0 to each of the reference lines of equal density, alone u043eu0432u0440u0435u043cu0435u043du043du043e u043eu043fu0440u0435u0434u0435u043bu00a0u044eu0442 toki baths, the relevant points u043fu0435u0440u0435u0441u0435u0447u0435u043du0438u00a0 characteristics with each of the reference characteristics.counting rates of u043fu043eu0434u043eu0431u0438u00a0 characterizing the degree of u0441u043eu043eu0442u0432u0435u0442u0441u0442u0432u0438u00a0 between coefficient of forms and details u043au0444u0434 coefficients form reference details u043au0444u044d1. .u043au0444u044du044c. u043au0444u044du043f point u043fu0435u0440u0435u0441u0435u0447u0435u043du0438u00a0. further, from the received u0440u00a0u0434u0430 ki... ki...Kn choose the closest (or equal) 1 and a reference line of equal density, it is used as the working u0434u043bu00a0 u043eu0435u0433u0443u043bu0438u0440u043eu0432u0430u043du0438u00a0 medium. ste u0442u043eu043au0430.5 il. with the content of 4.
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